Electrical and Electornics Eng. University of Fkui Kuzuhara Lab.

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PUBLICATION

Publication List of Masaaki Kuzuhara

[Journal papers]

  1. Y. Fukushima, K. Ogisu, M. Kuzuhara and K. Shiojima, “I-V and C-V characteristics of rare-earth metal / p-GaN Schottky contacts, “Phys. Stat. Solidi, C, 52, pp.S856-S859, (2009).
  2. H. Makino, N. Ishikawa, K. Shiojima and M. Kuzuhara, “Theoretical Investigation of GaN-Based Diodes with a Recessed Composite Schottky-Barrier Structure,” Jpn. J. Appl. Phys., 48, 04C103, (2009).
  3. H. Chikaoka, Y. Takakuwa, K. Shiojima and M. Kuzuhara, “Simulation of Tunneling Conract Resistivity in Non-polar AlGaN/GaN Heterostructures,” IEICE Trans. Electron., E92-C, pp.691-695, (2009).
  4. M. Nagamori, S. Ito, H. Saito, K. Shiojima, S. Yamada, N. Shibata and M. Kuzuhara, “Optimum rapid thermal activation of Mg-doped p-type GaN,” Jpn. J. Appl. Phys., Vol. 47, pp.2865-2867, (2008).
  5. K. Kodama and M. Kuzuhara, “Theoretical simulation of DC and RF performance for AlInN/InGaN/AlInN double-heterojunction FET using a Monte Carlo approach,” IEICE Electronics Express, 5, pp.1074-1079, (2008).
  6. M. Kuzuhara, “Prospect of III-Nitride Semiconductor Transistors (in Japanese),” IEICE J90-C, pp.960-966, (2007).
  7. T. Inoue, Y. Ando, H. Miyamoto, T. Nakayama, Y. Okamoto, K. Hataya and M. Kuzuhara, “30-GHz-Band Over 5-W Power Performance of Short-Channel AlGaN/GaN Heterojunction FETs,” IEEE Trans. Microwave Theory Tech., 53, pp.74-80, (2005).
  8. Y. Okamoto, Y. Ando, T. Nakayama, K. Hataya, H. Miyamoto, T. Inoue, M. Senda, K. Hirata, M. Kosaki, N. Shibata and M. Kuzuhara, “High-Power Recessed-Gate AlGaN-GaN HFET with a Field-Modulating Plate,” IEEE Trans. Electron Devices, 51, pp.2217-2222, (2004).
  9. Y. Okamoto, Y. Ando, K. Hataya, T. Nakayama, H. Miyamoto, T. Inoue, M. Senda, K. Hirata, M. Kosaki, N. Shibata and M. Kuzuhara, “Improved Power Performance for a Recessed-Gate AlGaN-GaN Heterojunction FET with a Field-Modulating Plate,” IEEE Trans. Microwave Theory Tech., 52, pp.2536-2540, (2004).
  10. T. Nakayama, H. Miyamoto, Y. Ando, Y. Okamoto, T. Inoue, K. Hataya and M. Kuzuhara, “Low-Contact-Resistance and Smooth-Surface Ti/Al/Nb/Au Ohmic Electrode on AlGaN/GaN Heterostructure,” Appl. Phys. Lett., 85, pp.3775-3776, (2004).
  11. M. Kuzuhara, H. Miyamoto, Y. Ando, T. Inoue, Y. Okamoto and T. Nakayama, “High-voltage rf operation of AlGaN/GaN heterojunction FETs,” Phys. Stat. Solidi a, Vol.200, No.1, pp.161-167 (2003).
  12. Y. Okamoto, Y. Ando, K. Hataya, H. Miyamoto, T. Nakayama, T. Inoue and M. Kuzuhara, “96 W AlGaN/GaN heterojunction FET with a field-modulating plate,” Electron. Lett., Vol.39, pp.1474-1475 (2003).
  13. T. Inoue, Y. Ando, K. Kasahara, Y. Okamoto, T. Nakayama, H. Miyamoto and M. Kuzuhara, “Advanced RF characteristics and delay-time analysis of short channel AlGaN/GaN heterojunction FETs,” IEICE Trans. Electron., Vol.E86-C, No.10, pp.2065-2070 (2003).
  14. A. Wakejima, K. Ota, K. Matsunaga and M. Kuzuhara, “A GaAs-based field-modulating plate HFET with improved WCDMA peak-output-power characteristics,” IEEE Trans. Electron Devices, Vol.50, pp.1983-1987 (2003).
  15. K. Hosoya, K. Ohata, M. Funabashi, T. Inoue and M. Kuzuhara, “V-band HJFET MMIC DROs with low phase noise, high power, and excellent temperature stability,” IEEE Trans. Microwave Theory Tech., Vol.51, pp.2250-2258 (2003).
  16. Y. Ando, Y. Okamoto, H. Miyamoto, T. Nakayama, T. Inoue and M. Kuzuhara, “10-W/mm AlGaN/GaN HFET with a field modulating plate,” IEEE Electron Device Lett., vol.24, pp.289-291 (2003).
  17. K.Hosoya, K. Ohata, T. Inoue, M. Funabashi and M. Kuzuhara, “Temperature- and structural parameters-dependent characteristics of V-band heterojunction FET MMIC DROs,” IEEE Trans. Microwave Theory Tech., Vol.51, pp.347-355 (2003).
  18. Y. Ohno and M. Kuzuhara, "Application of GaN-based heterojunction FETs for advanced wireless communication," IEEE Trans. Electron Devices, Vol.48, pp.517-523 (2001).
  19. Y. Ando, Y. Okamoto, H. Miyamoto, N. Hayama, T. Nakayama, K. Kasahara, Y. Ohno and M. Kuzuhara, “15W AlGaN/GaN heterojunction FET on sapphire substrate,” Phys. Stat. Solidi a, 188, pp.191-194 (2001).
  20. Y. Hori, M. Kuzuhara, Y. Ando and M. Mizuta, "Analysis of electric field distribution in GaAs metal-semiconductor field effect transistor with a field-modulating plate," J. Appl. Phys., 87, pp.3483-3487 (2000).
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