Electrical and Electornics Eng. University of Fkui Kuzuhara Lab.



Research on III-Nitride Transistors

The purpose of this study is to establish the basic technology to design, fabricate and characterize field effect transistors (FETs) based on novel nitride-based heterojunction structures, including AlGaN/GaN and AlInN/GaN. Using process facilities installed in our semiconductor clean room, we aim to demonstrate breakthrough transistor performances, such as high-breakdown voltages more than 100V and high-frequency characteristics enabling amplifier operation beyond 10GHz frequency bands.


Research on Device Simulation

This study focuses on understanding and prediction of compound semiconductor transistor performance, based on numerical computer simulation. Theoretical calculations provide us with useful information to improve device performance, such as high-frequency, high-voltage, high-efficiency, and high-temperature characteristics. The motto of our theoretical device study is to develop whole simulation programs by ourselves.


Study on Device Processing and Characterization

Extensive studies on device processing and device characterization are carried out in our laboratory. Those include impurity doping and annealing, low-resistance Ohmic contact formation, stable Schottky contact formation, dielectric film deposition, MIS interface characterization, low-damage dry etching of semiconductor layers, submicron electrode pattern definition, DC characterization, small-signal characterization, high-frequency large-signal characterization, etc.